| abstract |
A semiconductor device comprising: a first substrate having a bonding surface exposing a first electrode and a first insulating film; an insulating film covering the bonding surface of the first substrate; and a second substrate having a second electrode exposing a second The bonding surface of the insulating film, the bonding surface of the second substrate and the bonding surface of the first substrate are bonded together and sandwiched between the bonding surface of the second substrate and the bonding surface of the first substrate The second substrate is bonded to the first substrate in the state of the insulating film, the first electrode and the second electrode deform and destroy a part of the insulating film to directly electrically connect the first electrode and the second electrode to each other . A method of fabricating the semiconductor device is also disclosed. |