http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110211924-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76805 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76832 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2019-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-01-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-01-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-110211924-B |
| titleOfInvention | Method for manufacturing wafer structure |
| abstract | The application provides a manufacturing method of a wafer structure, after a first wafer and a second wafer are bonded, etching can be carried out from a first substrate of the first wafer to form a silicon through hole, then deposition of an insulating layer is carried out, the thickness of the insulating layer at the opening corner of the silicon through hole is larger than the thickness of the insulating layer on the side wall and the bottom surface of the silicon through hole, then anisotropic etching of the insulating layer is carried out until the insulating layer on the bottom surface of the silicon through hole is removed, and then filling of the silicon through hole is carried out. The insulating layer in the through silicon via plays a role in isolating and protecting a device, the thickness of the insulating layer at the opening corner of the through silicon via is larger than the thickness of the insulating layer on the side wall and the bottom surface of the through silicon via, and in the subsequent process of removing the insulating layer on the bottom surface of the through silicon via, even if the insulating layer at the opening corner of the through silicon via is lost, the thickness of the insulating layer is not too thin, so that the reliability of the insulating layer in the through silicon via is improved, and the influence of the forming process of the through silicon via on the yield and the performance of the device is. |
| priorityDate | 2019-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541 |
Total number of triples: 15.