http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110196530-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_44ff3005508304394801e265e503b811 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-26 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-26 |
| filingDate | 2019-02-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e82646a4e210d581fec493dfc154da4b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b2e430c6f749b0a3f460f1d544adc332 |
| publicationDate | 2019-09-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-110196530-A |
| titleOfInvention | The manufacturing method of phase shift mask blank, the manufacturing method of phase shifting mask and display device |
| abstract | The present invention provides a kind of phase shift mask blank that the transmitance that can be patterned can give full play to the cross sectional shape of phase shift effect to phase shift film is high.A kind of phase shift mask blank, it has phase shift film and the etching mask film on the phase shift film on the transparent substrate, it is characterized in that, the phase shift mask blank is to be formed with the etching mask film figure of desired pattern in the etching mask film as mask, the phase shifting mask with phase shift film figure is formed on the transparent substrate and carrying out wet etching to the phase shift film, the phase shift film contains transition metal, silicon, oxygen, the containing ratio of oxygen is 5 atom % or more, 70 atom % or less, oxygen until from the interface to the region of 10nm depth is 3.0 or less relative to the containing ratio of silicon. |
| priorityDate | 2018-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 38.