http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110194451-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_33a62710796e131599043055d399597f |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B2204-22 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B32-194 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-50 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B32-194 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-05 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-30 |
| filingDate | 2019-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cb52d5986677a44dd7b52d6070d9da00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f91bdfb6bb6479e491929b14953e666f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_33291519673c7fe74e54df9f4ffdb503 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bff1d715f8b1bfb270941cf774a30606 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2a4de88cae66b81989986c22d92a7ffb |
| publicationDate | 2019-09-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-110194451-A |
| titleOfInvention | Polymer covalently modified graphene material with both donor and acceptor groups and its preparation method and application |
| abstract | The invention belongs to the technical field of information storage, and in particular relates to a graphene material covalently modified by macromolecules having both donor and acceptor groups, as well as its preparation method and application. The invention also provides a method for constructing a three-state resistive memory device based on the graphene material. In the present invention, the device is composed of a bottom electrode, an active layer based on a polymer modified graphene material, and an apex pole, wherein the polymer has two types of groups, a donor and an acceptor. When different voltages are applied to the memory device, the device exhibits three different resistance states and has a memory function. Since the memory device exhibits three resistance states when a voltage is applied, the storage density of the device is increased from 2 n to 3 n compared with the bistable device, and more information can be stored. The device has good stability, simple preparation process, low cost and can be prepared in a large area. |
| priorityDate | 2019-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 42.