http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110190196-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_41e7550911d3e588caa3fbc6a252ad80 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-549 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-125 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K30-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-111 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-46 |
| filingDate | 2019-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5883a428b4cc14bc0eb52c8fcc92b34d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8b588beafa1f84f56a5c85c1d4b206e8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6335845a090bb3b91b25da84fef4f8a4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7312eb6aa7ae2bc4fc8b9c3a6453eff9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_83b7021d6e1cdc97d5e4c429517bd953 |
| publicationDate | 2019-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-110190196-A |
| titleOfInvention | Hydrohalic acid secondary doped polyaniline film and its preparation method and application |
| abstract | The invention provides a method for preparing polyaniline film secondarily doped with hydrohalic acid, which comprises the following steps: (1) dispersing dodecylbenzenesulfonic acid into a mixed solvent of deionized water and ethanol, and then adding aniline mixed Mixed solution A was evenly obtained; (2) The mixed solution A prepared in step (1) was used as the deposition solution, and the method of constant voltage electrochemical deposition was adopted, with ITO as the working electrode, platinum sheet as the counter electrode, and silver/silver chloride as The reference electrode is deposited at a voltage of 0.8-1.2 volts for 60-180 seconds to obtain ITO with a dodecylbenzenesulfonic acid-doped polyaniline film deposited on the surface; (3) the obtained in step (2) The ITO with a film deposited on the surface is soaked in a weak alkali solution, rinsed, then soaked in a hydrohalic acid solution, and then soaked in deionized water, then taken out and dried. In the present invention, the obtained film is used as a hole transport layer, which matches the energy level of the valence band of the perovskite film more closely, reduces the band difference, increases the built-in electric field strength, and can further increase the electric field strength on the basis of reducing interface charge recombination. Large open circuit voltage, improve battery efficiency. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022111583-A1 |
| priorityDate | 2019-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 48.