http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110176523-A

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filingDate 2019-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2e2d23b70cea89f3bb71fb19a206b316
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publicationDate 2019-08-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-110176523-A
titleOfInvention A kind of trace Sn-doped perovskite film repair preparation method and all-inorganic perovskite solar cell
abstract The invention discloses a preparation method for repairing a trace Sn-doped perovskite film and an all-inorganic perovskite solar cell, comprising the following steps: dissolving tin halide and lead halide into a DMF solution to form a base solution; dissolving the base solution Spin coating onto the surface of the substrate, and dry the base solution on the surface of the substrate to form a base layer on the surface of the substrate; dissolve cesium halide into DMSO to form a modification solution, spin the modification solution on the base layer for several times, and each time After the second spin coating is completed, heating, the modification solution and the base layer gradually react to form an all-inorganic perovskite layer. Tin halide destroys the film formed by the original lead halide, making the base layer into a loose and porous structure, which is more conducive to the reaction between cesium halide and lead halide in the later stage, and increases the reaction area between cesium halide and lead halide. After the cesium halide reacts, the pores are gradually filled, and the obtained all-inorganic perovskite layer has fewer pinholes and exhibits better charge extraction and charge transport capabilities.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110828588-A
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priorityDate 2019-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 37.