http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110165056-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d6151caef84f8c2f5f50f04fcead83ca |
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K2102-00 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-29 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-82 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-12 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-05 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-30 |
filingDate | 2019-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c48b8199408d7aaa23f0d99889074989 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c11af340d1eeca9cf0086a5bb78c0ede http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eb6d9ef5a762fa0a0886e8826393baca http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_87104acdb97b3e623b04c1f9782f43e2 |
publicationDate | 2019-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | CN-110165056-A |
titleOfInvention | A kind of CTM memory and preparation method thereof |
abstract | The invention belongs to the technical field of electronic devices, and discloses an organic-inorganic hybrid CTM memory of zirconia and zirconium silicate nanoparticles and a preparation method thereof. The CTM memory includes a lower electrode, a base, a storage layer and an upper electrode layer stacked from bottom to top; The storage layer is a mixed layer of organic and inorganic materials containing zirconia and zirconium silicate nanoparticles. The invention adopts the solution method to prepare the storage layer, realizes the preparation of low-cost CTM, has less investment in equipment and raw materials, and can realize large-scale industrial application. In addition, the storage layer prepared by the preparation method of the present invention has the functions of a tunneling layer, a storage layer and a barrier layer at the same time, which reduces the difficulty of the process and reduces the degradation of device performance caused by complex processes. |
priorityDate | 2019-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 48.