http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110147008-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1259 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-133351 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1333 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-44 |
| filingDate | 2014-06-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-110147008-B |
| titleOfInvention | Method for manufacturing array substrate for liquid crystal display |
| abstract | The invention relates to a method for manufacturing an array substrate for a liquid crystal display, which comprises the following steps: a) forming a gate electrode on a substrate; b) forming a gate insulating layer on the substrate including the gate electrode; c) forming a semiconductor layer (n) on the gate insulating layer + a-Si: H and a-Si: H); d) forming source/drain electrodes on the semiconductor layer; and e) forming a pixel electrode connected to the drain electrode, wherein the step a) or d) includes a step of forming each electrode by etching the copper-based metal film, and the etchant composition used in etching the copper-based metal film includes citric acid as an improver for increasing the number of sheets to be processed. |
| priorityDate | 2013-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 73.