http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110098220-A

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filingDate 2018-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1198cd8d93d73284ef13139d5ee8dc3b
publicationDate 2019-08-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-110098220-A
titleOfInvention Pixel defining structure and fabrication method of light-emitting device
abstract The present invention relates to a pixel defining structure and a method for fabricating a light-emitting device. The fabrication method includes firstly fabricating blind holes on a first pixel defining layer, and then fabricating a second pixel defining layer to cover the upper surface of the first pixel defining layer. As well as the hole wall and hole bottom of the blind hole, since the second pixel definition layer at the bottom of the blind hole is on a plane, it is only necessary to remove the second pixel definition layer and the first pixel definition layer under the blind hole through the same process in one step. , and does not affect the performance of the pixel electrode and the first pixel definition layer, which facilitates the preparation of a high-resolution pixel definition layer structure, and reduces the difficulty of the etching process, thereby reducing the cost of the etching process.
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priorityDate 2018-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 31.