http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110097911-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K5-2472 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-3404 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-0483 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C5-147 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H02M3-07 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-04 |
| filingDate | 2019-01-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-110097911-B |
| titleOfInvention | Semiconductor memory device and voltage generating circuit |
| abstract | The invention provides a semiconductor memory device and a voltage generating circuit. The circuit scale of the voltage generation circuit is significantly reduced compared to the prior art. The voltage generating circuit comprises a charge pump, a resistor and a current source circuit. The charge pump outputs the boosted voltage to the output node. The resistor is connected between the output node and another output node. The current source circuit has a first current path and a second current path connected in parallel between the other output node and a reference potential. The first current path includes a resistor and a first DAC. The first DAC generates a first fixed current corresponding to a voltage generation code. The second current path includes a second DAC. The second DAC generates a second constant current corresponding to a code obtained by inverting the voltage to generate the code. Therefore, the drive voltage obtained by lowering the boosted voltage is generated at the other output node. |
| priorityDate | 2018-01-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID71464629 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID426285521 |
Total number of triples: 22.