| abstract |
Provided is a semiconductor light-emitting element capable of reducing multimodal emission spectrum in a junction-type semiconductor light-emitting element including an InP cladding layer. In the semiconductor light-emitting element of the present invention, a first-conductivity-type InP cladding layer, a semiconductor light-emitting layer, and a second-conductivity-type InP cladding layer are provided in this order on a conductive support substrate, and the second-conductivity-type InP cladding layer serves as a light extraction side, A metal reflection layer is further provided between the conductive support substrate and the first conductivity type InP cladding layer, the metal reflection layer reflects the light emitted from the semiconductor light emitting layer, and the second conductivity type InP The surface of the cladding is provided with a plurality of recesses. |