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filingDate 2019-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dd2796ff5efb4dedfa464adeadb3ef69
publicationDate 2019-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-110060965-A
titleOfInvention Exempt to encapsulate diode and its processing technology
abstract One kind is exempted to encapsulate diode and its processing technology;Diode includes insulating rigid heat-radiating substrate, thermal plastic insulation, diode chip for backlight unit and electrical conductivity alloy layer;The lower surface of insulating rigid heat-radiating substrate fixation is pasted by the upper surface of thermal plastic insulation and diode chip for backlight unit;Diode chip for backlight unit includes silicon chip substrate, and lower surface is formed with the area N+ by the doping of the first impurity, and is formed with the area P+ by the doping of the second impurity, and the area N+ and the section P+ are every setting;The area the N+ and area P+ is ipsilateral and the surface of the two is equipped with metal electrode, the surface of metal electrode is each formed with electrical conductivity alloy layer.The present invention can reduce fee of material, labour cost, realization can at most reduce by 30% processing cost, and be able to ascend the production efficiency of unit time by significantly simplifying encapsulation.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-116190204-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112750766-A
priorityDate 2019-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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