http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110047992-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_615bd7f2c0a8cad77f76b71d1fb9f42a |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-85 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-01 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-12 |
| filingDate | 2019-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3062d866b23edbc01840cbcc2fe46eb0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_905d24e314abca737b5927cdb2f2b0ff http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4172919f7546b62d7c128deb713266db http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ffc035d76ed9a267705224caa0f22e6e |
| publicationDate | 2019-07-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-110047992-A |
| titleOfInvention | Manganese oxide film with horizontal and vertical exchange bias effect and preparation method |
| abstract | The invention relates to the technical field of manganese oxide film preparation, and discloses a manganese oxide film with horizontal and vertical exchange bias effects, which has a structure of [LaMnO 3 (m)/SrMnO 3 (n)] 10 , wherein LaMnO 3 is an A-type antiferromagnetic Mott insulator material, and SrMnO 3 is a G-type antiferromagnetic band gap insulator material. At the heterojunction interface composed of these two manganese oxides, due to the valence of manganese ions, Different will produce obvious double exchange effect, the manganese oxide film of the present invention has the highest horizontal exchange bias up to 950Oe, and the maximum vertical magnetic hysteresis loop bias up to 29%. Compared with other thin films, the manganese oxide thin film of the present invention has a thinner thickness, and the overall thickness is only tens of nanometers, which can be well used in magnetic recording materials such as miniaturized and miniaturized spin valves and sensors. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114592237-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114774844-A |
| priorityDate | 2019-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.