http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110047842-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ac31afbea1cbbb03498644721ffb4a62 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-00 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11563 |
filingDate | 2019-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2bfc7e751731e237f72e07ee351ac92c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3399e1b3235aedc160e1f01b473b9deb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4f8635501091dc57eaf3cec778ee47cf |
publicationDate | 2019-07-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | CN-110047842-A |
titleOfInvention | A silicon-based charge trapping memory device and preparation method thereof |
abstract | A silicon-based charge trapping type storage device, on a p-Si substrate, are: SiO 2 transition layer, tunneling layer, charge trapping medium layer, blocking layer (medium), gate electrode, and the substrate is also provided with a substrate electrode; a layer of SiO 2 transition layer is added between the substrate Si and the tunneling layer dielectric Al 2 O 3 ; the thickness of the SiO 2 transition layer is 0.1-2.5 nm; the thickness of the SiO 2 transition layer and the thickness of the tunneling dielectric Al 2 O 3 The sum is 2 to 6 nm. The SiO2 preparation method uses a thermal oxidation method. The lower electron state density between the SiO 2 transition layer and the Si substrate can reduce the interface state density at the Si/Al 2 O 3 interface, thereby improving the reliability of the silicon-based charge trapping memory device. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111509055-A |
priorityDate | 2019-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.