| abstract |
The present invention provides an etching method and a method of manufacturing a semiconductor device. The etching method includes: supplying plasma of a first process gas to an etching object to form a deposition layer on the etching object, the first process gas including a fluorocarbon gas and an inert gas, and the The etching object includes a first region containing silicon oxide and a second region containing silicon nitride; providing plasma of an inert gas to the etching object having the deposition layer on the etching object, to activating an etching reaction of the silicon oxide, wherein a negative DC voltage is applied to an opposite portion of an etched surface spaced apart from the etched object to face the etched object, the opposite portion comprising silicon; And subsequently, a plasma of a second process gas including an inert gas and an oxygen-containing gas is provided to remove the etch reaction products. |