| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32135
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32134
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-34 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-03
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-315
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-485
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-482
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-488
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-053
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-30 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 |
| filingDate |
2018-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_97a011a6b3eb74fd9b3bb672a214d3ec
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eb9af4889d2fc2ff0b52a429cabdc341
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b7c2a4dfd467cc921d04442c42adf822
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_79d71584b746f1d62aa690b32822212d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5a5941a7cf00e1ce050289c5fc7c63c2 |
| publicationDate |
2019-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-110010604-A |
| titleOfInvention |
Semiconductor device and method of manufacturing the same |
| abstract |
Semiconductor devices and methods of making the same are disclosed. The support layer and the mold layer are partially etched from the substrate to form the mold pattern and the support pattern on the substrate such that contact holes are formed through the support pattern and the mold pattern, and interconnects are exposed through the contact holes . A lower electrode layer is formed on the mask pattern to fill the contact hole, and the lower electrode in the contact hole is formed by partially removing the lower electrode layer and the mask pattern. The lower electrode is in contact with the interconnect and supported by the support pattern having the same thickness as the support layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113707614-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112992790-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2023024429-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2023024428-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022198877-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022095433-A1 |
| priorityDate |
2017-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |