| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6bc4cece9dd3e8f3abd42a24d92bcee7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N2021-3595
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N2001-2873 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N1-286
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N21-3563
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N1-44 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N21-3563
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N1-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N1-44 |
| filingDate |
2019-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_32737827fd9675f02d6a80585271a2c3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2a0df6b0bbe41964bbbde48f01b67399
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0f0a2e952183a800107a0ae0f30d8114
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2111a870b421f3f118319d04b9e933c6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_615a10ae203f82b268fbbb8e3f06e18a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6edbd92c62ad3f553a3e672137a1e00d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_28575a7cb04365c48a52ff0b6aab5b61 |
| publicationDate |
2019-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-110006841-A |
| titleOfInvention |
A kind of detection method of O, C, III, V group elements in granular polysilicon |
| abstract |
The invention discloses a detection method for O, C, III and V group elements in granular polysilicon, including an experimental sample rod production detection unit, a comparative sample rod production detection unit and a granular polysilicon element content calculation unit. The granularity of itself does not have the conditions for direct low-temperature infrared detection. The conventional method of directly melting and pulling single crystals in a quartz crucible or using a container (such as a quartz tube) to melt into a rod shape will contaminate the sample to varying degrees and cannot be obtained. The actual impurity content of granular silicon. In this scheme, a high-purity master batch rod is used as the carrier of granular polysilicon, and the impurity concentration of the high-purity master batch sample rod and the impurity concentration of the mixed single crystal sample rod are respectively measured, and the particles can be accurately calculated by the subtraction method. impurity content in polysilicon. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110606734-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114808110-A |
| priorityDate |
2019-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |