http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109994380-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8cf8d77ac0eff1767b22d2fb9445b64d |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-308 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308 |
| filingDate | 2018-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aa840869d747f91ec79e73eb77fe025d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0b27f061ca5477550bbe6bec986cf2b6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2d12edc426c672cc47d05fb1dd890c9d |
| publicationDate | 2019-07-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-109994380-A |
| titleOfInvention | Method for etching features in stacked layers |
| abstract | The present invention relates to methods for etching features in stacked layers. A method is provided for etching features in a stacked layer below a carbon-containing mask. Cool the stack to a temperature below -20°C. An etching gas is provided that includes a free fluorine-providing component, a hydrogen-containing component, a hydrocarbon-containing component, and a fluorocarbon-containing component. Plasma is generated from the etching gas. A bias voltage having an amplitude of at least about 400 volts is provided to accelerate ions from the plasma to the stack. Features are selectively etched in the stack relative to the carbon-containing mask. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113643973-A |
| priorityDate | 2017-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 39.