http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109994325-B

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filingDate 2019-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2021-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2021-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-109994325-B
titleOfInvention Preparation method of bismuth oxide/nitrogen-doped carbon dot hollow porous microsphere negative electrode material
abstract The invention belongs to the field of nano composite material preparation, and particularly relates to a preparation method of a bismuth oxide/nitrogen-doped carbon point hollow porous microsphere negative electrode material. The bismuth oxide/nitrogen-doped carbon point hollow porous microsphere anode material is prepared by taking bismuth nitrate and nitrogen-doped carbon points as raw materials through a solvothermal-calcination two-step method. The bismuth oxide and the nitrogen-doped carbon dots in the composite material have a synergistic effect, so that the capacitance performance of a single material can be improved. As a super capacitor cathode material, the specific capacitance is as high as 1046F/g at 1A/g, and the super capacitor cathode material shows high electrochemical performance.
priorityDate 2019-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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