| abstract |
The invention provides a manufacturing method of a semiconductor device and an integrated semiconductor device.A dielectric island positioned on an epitaxial layer and a groove positioned in the epitaxial layer are formed in the manufacturing process of the semiconductor device integrated with an enhancement device and a depletion device. In the process of forming a channel of the depletion device, because the existence of the dielectric island blocks the injection of channel ions, the ion concentration below the dielectric island is low, so that the breakdown reliability of the device in an on state is greatly improved; meanwhile, due to the existence of the dielectric islands, the thickness of the gate dielectric layer is increased, the gate capacitance is reduced, and the switching loss of the device is reduced. The trenches are arranged in the epitaxial layer and serve as isolation structures of the enhancement type devices and the depletion type devices, so that on one hand, the isolation characteristics between the enhancement type devices and the depletion type devices are improved, and on the other hand, the chip area occupied by the isolation structures is reduced. |