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filingDate 2017-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2021-02-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2021-02-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-109962179-B
titleOfInvention A kind of thin film and its preparation method and QLED device
abstract The invention discloses a thin film, a preparation method thereof, and a QLED device. The method comprises the steps of: providing a nanometer metal oxide solution; adding an organic heterocyclic compound to the nanometer metal oxide solution to obtain a modified nanometer metal oxide solution; The modified nano metal oxide solution is made into a thin film to obtain a modified nano metal oxide thin film. By modifying the nanometer metal oxide, the present invention increases its electron transport efficiency, increases the conductive sites on the surface of the nanometer metal oxide, thereby improves the overall charge transport efficiency of the QLED device, and optimizes the performance of the quantum dot light-emitting layer and the electron transport layer. Matching and other effects, improve the luminous efficiency of the overall device.
priorityDate 2017-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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