http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109943329-B

Outgoing Links

Predicate Object
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01K11-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K11-66
filingDate 2019-04-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2021-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2021-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-109943329-B
titleOfInvention Two-dimensional mixed metal halide light-emitting semiconductor and preparation method and application thereof
abstract The invention belongs to the technical field of material preparation, and particularly relates to a two-dimensional mixed metal halide light-emitting semiconductor with a molecular formula of [ (Me) 2 ‑DABCO]Ag 2 PbBr 6 Belonging to the monoclinic system, P2 1 Space group, cell parameters β=91.6700(10)°, And the mixed metal halide emits red light with the wavelength of 711nm under the excitation of ultraviolet light with the wavelength of 316nm, the Stock shift is 395nm, the half-peak width is 239nm, the luminous intensity is in a linear relation with the temperature within 80-200K, and the mixed metal halide can be used as a fluorescent temperature sensing material in a low-temperature region.
priorityDate 2019-04-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 21.