http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109881247-B
Outgoing Links
Predicate | Object |
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classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y40-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y30-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-62 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-16 |
filingDate | 2019-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2020-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2020-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | CN-109881247-B |
titleOfInvention | Preparation method of bent SnTe single crystal nanowire |
abstract | The invention discloses a preparation method of a bent SnTe single crystal nanowire, which comprises the following steps: in Si/SiO 2 Plating a layer of gold film on the surface of the sheet as a substrate; putting the substrate and the SnTe powder source into a quartz tube, putting the quartz tube into a tubular heating furnace, and exhausting air in the tubular heating furnace in a repeated inflation and exhaust mode by using gas which does not participate in reaction as cleaning gas; argon is used as carrier gas, SnTe powder is positioned in the middle of a heating furnace, a substrate is positioned at the downstream of the flowing of the carrier gas, a tubular heating furnace is started to heat and raise the temperature, and nanowires grow under a growing condition; moving the tubular heating furnace to the downstream of the carrier gas flow for a certain distance, and continuing to grow the nanowires of the bent part under the same growth conditions; and naturally cooling to obtain the bent SnTe single crystal nanowire. |
priorityDate | 2019-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.