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filingDate 2019-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9f18437cd0935a81f61a48b8d5c9cd4b
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publicationDate 2019-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-109872962-A
titleOfInvention Manufacturing method of semiconductor device, storage medium, and substrate processing apparatus
abstract The present invention provides a method for manufacturing a semiconductor device, a storage medium, and a substrate processing apparatus, which solve the problem that the processing quality of the substrate is lowered due to the device structure formed on the substrate. The method for manufacturing a semiconductor device includes the steps of: receiving substrate data including either or both the number of layers and structures of devices formed on the substrate; and setting device parameters corresponding to the substrate data; A step of supporting the substrate corresponding to the substrate data above the substrate stage; a first temperature rise step of raising the temperature of the substrate based on the device parameters while being away from the surface of the substrate stage; after the first temperature rise step, the substrate is placed on a a process of placing a substrate; and a process of processing a substrate in a processing chamber.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113496872-A
priorityDate 2018-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 40.