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filingDate 2019-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2020-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2020-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-109865528-B
titleOfInvention Semiconductor photocatalyst material and processing technology thereof
abstract The invention discloses a semiconductor photocatalyst material and a processing technology thereof, wherein the composite photocatalyst material comprises cerium metal, bismuth vanadate and hexagonal boron nitride, the composite photocatalyst material takes the hexagonal boron nitride as a carrier, and the hexagonal boron nitride is loaded with the bismuth vanadate doped with the cerium metal; the processing technology of the composite photocatalyst material comprises the following steps: preparing bismuth vanadate; preparing a cerium/bismuth vanadate compound; preparing hexagonal boron nitride nanosheets; preparing a cerium/bismuth vanadate/hexagonal boron nitride composite photocatalyst; in the composite photocatalyst material, the bismuth vanadate photocatalyst is doped with metal cerium and loaded on the hexagonal boron nitride carrier, and the combination of photoproduction electrons and holes of the bismuth vanadate photocatalyst is greatly inhibited under the combined action of the metal cerium and the hexagonal boron nitride carrier, so that the service life of the photoproduction electrons-holes is effectively prolonged, and the photocatalytic activity of the bismuth vanadate photocatalyst is improved; experimental results show that the composite photocatalyst material has good visible light catalytic performance.
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