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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B01J27-198
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filingDate 2019-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4178ddf61008b269bee2722549c161a6
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publicationDate 2019-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-109865525-A
titleOfInvention A kind of preparation method of CoPi/Ag/bismuth vanadate composite photoanode material
abstract The invention provides a preparation method of a CoPi/Ag/bismuth vanadate composite photoelectric anode material, which is to successfully load CoPi/Ag on the surface of BiVO 4 by hydrothermal deposition to form a stable photoelectric anode composite film CoPi/Ag/BiVO 4 . The invention utilizes the effects of plasma Ag nanoparticles and Co-Pi co-catalyst to expand the visible light absorption range of bismuth vanadate, so that it can effectively capture light, reduce charge transfer resistance, accelerate the rapid migration of carriers, thereby inhibiting the The recombination of electron-hole pairs, thereby improving the photocatalytic performance of BiVO 4 composite photoelectrodes.
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type http://data.epo.org/linked-data/def/patent/Publication

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