http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109860197-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11582 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-1157 |
| filingDate | 2019-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-109860197-B |
| titleOfInvention | Three-dimensional memory and method for forming three-dimensional memory |
| abstract | The invention provides a method for forming a three-dimensional memory, which comprises the following steps: providing a first semiconductor structure, wherein the first semiconductor structure is provided with a substrate, a stacked structure positioned on the substrate and a channel hole penetrating through the stacked structure, and the channel hole is provided with a vertical channel structure; forming an insulating hole penetrating through the stacked structure, and doping a substrate at the bottom of the insulating hole to form an array common source; forming an insulating portion in the insulating hole, the insulating portion being electrically insulated from a substrate in contact therewith; forming a conductive contact electrically connected to the array common source from the passive side of the first semiconductor structure. |
| priorityDate | 2019-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.