| abstract |
The present invention provides an imaging device (100, 200, 1200) comprising a semiconductor substrate (312) and an array (202) of pixel circuits (1202, 1204) arranged on the semiconductor substrate as a form a matrix and define the corresponding pixels of the device (212). Pixel electrodes (1208) are respectively coupled to the pixel circuits, and a photosensitive film (1206) is formed over the pixel electrodes. An at least partially transparent common electrode (1207) is formed over the photosensitive film. An opaque metallization layer (1214) is formed over the photosensitive film on one or more of the pixels and is ohmically coupled to the common electrode. Control circuitry (208, 1212) is coupled to apply a bias voltage to the common electrode via the opaque metallization layer while receiving using one or more of the pixels over which the opaque metallization layer is formed The signal corrects the black level of the output value from the pixel. |