| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-845
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1211 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0924
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1054
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823821
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7855
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76837 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2018-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2022-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2022-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-109841618-B |
| titleOfInvention |
Semiconductor structure cutting process and structure formed thereby |
| abstract |
Methods of cutting fins and structures formed thereby are described. In an embodiment, a structure includes first and second fins on a substrate and a fin cut fill structure disposed between the first and second fins. The first fin and the second fin are longitudinally aligned. The fin cut fill structure includes a liner on a first sidewall of the first fin and an insulating fill material on a sidewall of the liner and on a second sidewall of the first fin. The liner is also located on a surface of the first fin between the first sidewall of the first fin and the second sidewall of the first fin. Embodiments of the present invention relate to semiconductor structure dicing processes and structures formed thereby. |
| priorityDate |
2017-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |