http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109817514-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1203 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-84 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02041 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0657 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02293 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7624 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76256 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76294 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-16 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate | 2018-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-109817514-B |
| titleOfInvention | Semiconductor-on-insulator substrate and method of forming the same |
| abstract | Some embodiments of the present disclosure pertain to methods of forming semiconductor-on-insulator substrates. The method may include epitaxially forming a silicon germanium layer on a sacrificial substrate, and epitaxially forming a first active layer on the silicon germanium layer. The composition of the first active layer is different from the composition of the silicon germanium layer. The sacrificial substrate is flipped over and the first active layer is bonded to the upper surface of the dielectric layer on the first substrate. The sacrificial substrate and the SiGe layer are removed, and the first active layer is etched to define outer sidewalls and expose outer edges of the upper surface of the dielectric layer. A second active layer is epitaxially formed on the first active layer to form a connected active layer. The first active layer and the second active layer have substantially the same composition. |
| priorityDate | 2017-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 50.