http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109804467-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14627 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14621 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14623 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-146 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14605 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14689 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14683 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04N25-70 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1463 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14645 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-146 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04N5-369 |
| filingDate | 2017-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-109804467-B |
| titleOfInvention | Solid-state imaging device, manufacturing method of solid-state imaging device, and electronic device |
| abstract | It is an object of the present invention to solve at least one of the various problems of 2PD type image sensors. There is provided a solid-state imaging element including a plurality of pixels each including a photoelectric conversion element formed on a silicon substrate. A part of the pixel is configured such that its photoelectric conversion element is separated by a first type separation region extending in a flat plate shape in a direction along the thickness direction of the silicon substrate, and the other part in the pixel is configured such that Its photoelectric conversion elements are separated by second-type separation regions formed of a material different from the first-type separation regions, and the second-type separation regions extend in a flat plate shape in a direction along the thickness direction of the silicon substrate. |
| priorityDate | 2016-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 46.