| abstract |
The present invention discloses a method of forming a film on a substrate, the method comprising: in a chemical vapor deposition (CVD) or atomic layer deposition (ALD) method, under thermal or plasma conditions 1a R 1b R 1c CS) s (R 2 2 N) n (Si-Si)X x H h (I) thiodisilane heating to obtain a silicon-containing film deposited on a substrate, where: subscript s , n, x, h and R 1a , R 1b , R 1c , R 2 2 and X are as defined herein. |