http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109768168-B

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classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-549
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-42
filingDate 2019-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2022-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2022-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-109768168-B
titleOfInvention A method for preparing double electron transport layer perovskite solar cells
abstract Embodiments of the present invention provide that the present invention provides a method for preparing a high-performance perovskite solar cell using a double electron transport layer structure. The method comprises: preparing a double electron transport layer on fluorine-doped tin oxide transparent conductive glass; the double electron transport layer is an indium gallium zinc oxide thin film and a tin oxide thin film, and the preparation method of the IGZO thin film can be selected from magnetron Sputtering or solution spin coating, the layer thickness is 10-45nm; a layer of organic-inorganic hybrid perovskite structure FA 0.7 MA 0.2 Cs 0.1 Pb(Br 0.05 I 0.95 ) 3 is prepared as a light absorbing layer by solution spin coating; A layer of Spiro‑OMeTAD was prepared as a hole transport layer by solution spin coating; a gold electrode was vacuum evaporated. The above technical solution has the following beneficial effects: reducing carrier recombination inside the solar cell, promoting effective energy output, increasing the fill factor (FF) of the solar cell, and preparing a solar cell with high energy conversion efficiency.
priorityDate 2019-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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