| abstract |
The invention provides a patterned photoresist, self-aligned multiple patterns, a semiconductor device and a manufacturing method. The patterned photoresist is first subjected to surface treatment with a curing agent, and the surface-treated photoresist is treated The surface of the photoresist is oxidized and/or nitrided to form a thinner cured layer on the surface of the photoresist, which not only does not exert greater pressure on the photoresist to deform it, but also It can increase the hardness of the photoresist surface, play the role of curing, support and protection, reduce the line roughness of the photoresist, keep the pattern of the photoresist with a good sidewall morphology, and increase the process window, thereby The problem of pattern deformation of the self-aligned multiple patterns formed based on the patterned photoresist is improved, the yield of the manufactured semiconductor device is improved, and the cost is reduced. |