http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109755307-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-772 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 |
| filingDate | 2019-01-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-02-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-02-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-109755307-B |
| titleOfInvention | Avalanche field effect transistor based on two-dimensional layered material and measuring device |
| abstract | The invention discloses an avalanche field effect transistor based on a two-dimensional layered material and a measuring device, wherein the transistor comprises an insulating layer, a metal electrode layer, a two-dimensional material thin film layer and a two-dimensional material thin film layer; the metal electrode layer comprises a drain electrode layer, a source electrode layer and a gate electrode layer; the two-dimensional material thin film layer and the two-dimensional material thin film layer are laid on the insulating layer, the two-dimensional material thin film layer is located between the two stacked parts, the source electrode layer covers the non-stacked part of the two-dimensional material thin film layer, the drain electrode layer covers the stacked part or the non-stacked part of the two-dimensional material thin film layer, and the gate electrode layer is connected with the insulating layer. The measuring device comprises the avalanche field effect transistor based on the two-dimensional layered material, a voltage source and an ammeter. The transistor reduces the subthreshold swing of the field effect transistor to be less than 1mV/dec, realizes low power consumption, reduces the size of the device and improves the stability of the device. |
| priorityDate | 2019-01-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.