| abstract |
A method of fabricating a semiconductor package structure includes the following steps. The die is bonded to the wafer. A layer of dielectric material is formed on the wafer and die. A layer of dielectric material covers the top surface and sidewalls of the die. At least one planarization process is performed to remove a portion of the layer of dielectric material and a portion of the die to expose the top surface of the die and form a dielectric layer on the sides of the die. A dielectric layer surrounds and covers the sidewalls of the die. |