http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109742415-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E60-50 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y30-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01M4-90 |
| filingDate | 2019-02-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-09-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-09-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-109742415-B |
| titleOfInvention | High-load metal-loaded monoatomic graphene material and preparation method thereof |
| abstract | The invention discloses a high-load metal-loaded monoatomic graphene material and a preparation method thereof, wherein heme and a nitrogen-rich material are uniformly mixed, and a solvent is added for grinding to obtain uniform powder; and carrying out sectional heat treatment on the obtained uniform powder to obtain a black product, namely the high-load metal-loaded monoatomic graphene material. According to the method, the graphene material loaded with the metal monoatomic atoms is generated by adopting an in-situ growth method, the carbon coating of the loaded monoatomic atoms is effectively prevented, the utilization rate of the monoatomic atoms participating in functional reaction is improved, the problem that a large number of monoatomic atoms are coated due to the mixing of conventional salt, a carbon source and a nitrogen source is effectively solved, the integrity of a carbon carrier material is effectively maintained, and the influence on electronic conduction caused by the introduction of excessive monoatomic defects of the carrier material is avoided. |
| priorityDate | 2019-02-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 71.