| abstract |
The invention belongs to the technical field of material application, and in particular relates to a van der Waals heterojunction photoelectric detector with periodic strain and a preparation method. The above-mentioned device construction method is as follows, partially depositing an insulating layer on a semiconductor substrate, performing patterning treatment on the part where the insulating layer is not deposited, and epitaxially growing a semiconductor nanowire array, and using wet transfer technology to transfer the two-dimensional layered material onto the above-mentioned array, The two-dimensional layered material is used to induce periodic strain on the semiconductor nanoarray by the capillary action during the evaporation of water. Finally, the electrode is constructed by electron beam exposure combined with thermal evaporation to complete the construction of the device. This van der Waals heterojunction optoelectronic device with periodic strain provides a new idea for designing high-performance photodetectors, which has great commercial value and far-reaching practical significance. |