http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109690759-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-04105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-12105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-96 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-075 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0048 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08L63-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-023 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-295 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-023 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-12 |
| filingDate | 2017-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-109690759-B |
| titleOfInvention | Method for manufacturing semiconductor device |
| abstract | A method of manufacturing a semiconductor device, comprising: a step of preparing a structure in which a plurality of semiconductor chips (40) having connection terminals (30) on the surface thereof are embedded in a sealing material (10); a step of forming a 1 st insulating resin film (60) in a region on the surface of the structure on the side where the connection terminals (30) of the semiconductor chip (40) are embedded; forming a 1 st opening (250) in the 1 st insulating resin film (60) and the structure so as to expose a part of the connection terminal (30); a step of forming a conductive film (110) so as to cover the exposed connection terminal (30) and the 1 st insulating resin film (60); and forming a 2 nd insulating resin film (70) on the surface of the conductive film (110), and forming a 2 nd opening (300) in the 2 nd insulating resin film (70) to expose a part of the conductive film (110). In the step of forming the 2 nd opening (300), the 2 nd opening (300) is formed outside the region formed on the semiconductor chip (40) in the 2 nd insulating resin film (70). The manufacturing method is characterized in that a photosensitive resin composition containing an alkali-soluble resin is used as a resin material constituting the 1 st insulating resin film (60), and the surface tension of a droplet formed from the photosensitive resin composition is 20mN/m or more and 45mN/m or less as measured by a pendant drop method. |
| priorityDate | 2016-09-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 354.