| abstract |
The invention relates to a zinc oxide piezoelectric sensor based on an indium selenide transistor and a manufacturing method thereof, belonging to the field of piezoelectric sensors, comprising a P-type silicon wafer, a silicon dioxide film, an aluminum oxide film, two metal electrodes, InSe Nano film and zinc oxide film, silicon dioxide film, aluminum oxide film and InSe nano film are arranged on the upper surface of one side of the P-type silicon wafer in sequence, PMMA layer is arranged on the InSe nano film, and two metal electrodes are fixed on the InSe nano film On the film, a zinc oxide film is arranged on the upper surface of the other side of the P-type silicon wafer, and a layer of Au is arranged on the upper and lower surfaces of the zinc oxide film, and the Au is connected with the metal electrode. The present invention selects two-dimensional indium selenide material with high sensitivity and high mobility and zinc oxide film with excellent piezoelectric properties to provide signals, uses the intrinsic amplification of transistors to amplify the pressure signal provided by zinc oxide, and greatly improves the The detection accuracy and sensitivity of the pressure sensor. |