http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109655667-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_709b2c33370e0cc9cba78703c6e8fd67
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7a09640a1f427bafd92210fb51a814ad
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2601
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R27-02
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R27-02
filingDate 2018-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_965fa82f7912c737a0925b6a12767837
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c1366d42563141e68d41b33b8ea36a67
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b6ae5b91e605adc00870b3c168de8077
publicationDate 2019-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-109655667-A
titleOfInvention Method and device for testing edge resistance of silicon wafer after etching
abstract An embodiment of the present invention provides a method and device for testing edge resistance of a silicon wafer after etching. In the method, a preset electrical signal is input at a test point on the front surface of the silicon wafer after etching, and a test point on the back surface away from the front surface is used. The test point of the device obtains the output electrical signal to calculate the edge resistance of the silicon wafer after etching according to the preset electrical signal and the output electrical signal. The embodiment of the present invention provides a method and device for testing edge resistance of silicon wafers after etching, which can test all silicon wafers after etching, improve test efficiency and test data accuracy, and further improve production efficiency and product quality. Rate.
priorityDate 2018-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-205680658-U
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-205880056-U
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123

Total number of triples: 20.