| abstract |
The present invention belongs to the field of methods for producing thin inorganic films on substrates, in particular atomic layer deposition methods. The present invention relates to a method for producing an inorganic film comprising depositing a compound of general formula (I), wherein M is Mn, Ni or Co, X is a ligand coordinating to M, on a solid substrate, and n is 0 , 1, 2, 3 or 4, R 1 is alkyl, alkenyl, aryl, halogen or silyl, R 2 is alkyl, alkenyl, aryl or silyl, p and q are 1 or 2, where p+q=3, and m is 1, 2, or 3. |