http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109616550-B

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filingDate 2018-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2020-02-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2020-02-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-109616550-B
titleOfInvention Improve Sb2Se3Method for film crystal grain columnar growth trend
abstract The invention belongs to the technical field of thin film solar cell preparation, and particularly relates to a method for improving Sb content 2 Se 3 The method for the columnar growth trend of film crystal grains comprises the step of treating a CdS film obtained by a water bath method by oxygen plasma so as to induce Sb 2 Se 3 And (4) columnar growth of the film. The preparation method comprises the steps of firstly depositing a CdS film on an FTO substrate by a water bath method, then treating the obtained CdS film by oxygen plasma, and finally rapidly depositing a Sb film by an RTE method 2 Se 3 Film, after oxygen plasma treatment of CdS film, Sb 2 Se 3 The film grows in a columnar shape, so that the efficiency of the antimony selenide film battery is greatly improved, and the antimony selenide film battery has certain scientific value and promotion effect on the development of the antimony selenide film battery.
priorityDate 2018-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 33.