| abstract |
A method for preparing a low-voltage driven organic light-emitting diode (OLED) with a p-i-n structure by a solution method, the OLED device is composed of a transparent ITO glass substrate, a p-type doped transport layer, a light-emitting layer, an n-type doped transport layer layer, electron buffer layer and metal back electrode are stacked. By introducing the composite material PTAA:AgNWs into the OLED device, the invention can effectively improve the transport performance of the hole transport layer and reduce the hole injection barrier, thereby reducing the driving voltage of the device; PEI:SnS is prepared by a solution method. 2 ‑QDs serve as electron transport layers in OLED devices, further improving the electron injection and transport capabilities in the devices. Finally, the luminous efficiency of the OLED device is effectively improved while reducing the device driving voltage. |