http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109585364-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_81ca9a5f1da06521982d5a6b55b04244 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76813 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5283 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-528 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-528 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2018-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3b1a72d84316c0a93a29a2dce873e40a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6ad0e06ae1f834e88ac79a5b470da92c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d545c00b88289d225bd68287e3118456 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dff57d30e818bde4e704a07c06db211e |
| publicationDate | 2019-04-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-109585364-A |
| titleOfInvention | A kind of formation method of double Damascus structure |
| abstract | The invention provides a method for forming a double damascene structure. The steps include: sequentially forming a barrier layer, a low dielectric constant layer, a first buffer layer, a hard mask layer and a second buffer layer on the surface of a semiconductor structure embedded with a metal structure layer; etch the second buffer layer and the hard mask layer to form a first trench; etch the first buffer layer and the low dielectric constant layer to form a first via; continue down Etching the low dielectric constant layer to form a second through hole; performing integrated etching on the first through hole and the second through hole to form a second trench; opening the barrier layer to expose the metal structure, forming a double Damascus structure. Performing two partial through-hole etchings can well solve the loading effect caused by the etching and improve the double damascene etching defects, thereby effectively improving the double damascene topography. Further, the second trench formed by the integrated etching is more conducive to subsequent copper filling, which improves the reliability of the double damascene structure. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11018052-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111627855-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110494971-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110494971-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020258124-A1 |
| priorityDate | 2018-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.