| abstract |
The present invention provides a SiC heater, which comprises: a heating element having a thin-plate-shaped silicon carbide sintered body and an insulating film formed on a surface of the silicon carbide sintered body; a pair of electrodes for energizing the heating element; and a heater base for blocking heat from the heating element and holding the heating element from one surface side, wherein the insulating film is located on the surface of the silicon carbide sintered body opposite to the heater base, and has a resistivity of 10 at normal temperature 9 Omega cm or more, and has a thermal expansion coefficient of 2X 10 ‑6 6 x 10,/K or more ‑6 below/K, SiO 2 The base material contains 1to 35 wt% of inclusion B 2 O 3 And Al 2 O 3 The 1 st additive component of at least one of (1) and (2) contains 1to 35 wt% of a 2 nd additive component containing at least 1 of MgO and CaO. |