| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02639 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02502
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02491
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02433
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-183
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02645
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02639
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02603
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-602
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-24 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B23-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B23-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-60 |
| filingDate |
2017-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-03-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2021-03-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-109563638-B |
| titleOfInvention |
Nucleation structures suitable for epitaxial growth of three-dimensional semiconductor devices |
| abstract |
The invention relates to a nucleation structure (10) suitable for the epitaxial growth of three-dimensional semiconductor elements (31), the nucleation structure (10) comprising: a substrate (11) comprising a monolith forming a growth surface (13) crystalline material; a plurality of intermediate portions (14) made of intermediate crystalline material epitaxially grown from said growth surface (13) and defining an upper intermediate portion surface (15); a plurality of nucleation portions (16) consisting of Made of a material comprising transition metals forming a crystalline nucleation material, each nucleation portion is epitaxial from the middle portion upper surface (15) and defines a nucleation surface (17) suitable for epitaxial growth of three-dimensional semiconductor elements. |
| priorityDate |
2016-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |