http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109553415-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-62218 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B41-5111 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B41-88 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-491 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-491 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B41-88 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-622 |
| filingDate | 2019-01-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-109553415-B |
| titleOfInvention | Preparation method of silicon-doped lead zirconate titanate non-oriented film with high electrothermal effect |
| abstract | A preparation method of a silicon-doped lead zirconate titanate non-oriented film with high electrothermal effect relates to the field of refrigeration of microelectronic devices. The invention aims to solve the problem that the existing method for refrigerating the integrated circuit in a non-oriented film form is lacked. Dissolving lead acetate in a glacial acetic acid solution, heating to remove water to obtain a solution A, and dissolving zirconium n-propoxide and tetrabutyl titanate in ethylene glycol monomethyl ether to obtain a solution B; mixing A and B to form flocculent insoluble substance, dissolving the insoluble substance, and heating to obtain PbZr 1‑x Ti x O 3 Sol solution as solution C; mixing the ethanol solution of the nano silicon dioxide particles with the solution C to obtain a solution D; coating C or D on an FTO substrate to form a wet film, baking to form a dry film, and annealing the dry film to form a layer of thin film; repeatedly coating the film to obtain a film with thickness; and growing a platinum electrode on the upper surface of the film by a magnetron sputtering method to prepare the lead zirconate titanate non-oriented film. It is used for preparing films with high electrothermal effect. |
| priorityDate | 2019-01-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 53.