| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2237-368
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2237-366
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2237-341
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-6567
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3409
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2237-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-656 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-622
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C03C8-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B38-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B37-005 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B38-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B37-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-622
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C03C8-24 |
| filingDate |
2018-11-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2021-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-109516829-B |
| titleOfInvention |
Method for relieving thermal stress in connection process of porous silicon nitride and transparent aluminum oxynitride ceramic |
| abstract |
The invention relates to a method for relieving thermal stress in the process of connecting porous silicon nitride and transparent aluminum oxynitride ceramic, which adopts Y 2 Si 2 O 7 Layer and Y 2 SiO 5 The layer is used as a transition layer to relieve the thermal stress in the process of connecting the porous silicon nitride ceramic and the transparent aluminum oxynitride ceramic; said Y is 2 Si 2 O 7 The porosity of the layer is 60% or less, Y 2 SiO 5 The porosity of the layer is 70% or less; preferably, said Y is 2 Si 2 O 7 The porosity of the layer is 20-60%, and Y is 2 SiO 5 The porosity of the layer is 30-70%. |
| priorityDate |
2018-11-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |