http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109487335-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-38 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B23-00 |
| filingDate | 2019-01-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-109487335-B |
| titleOfInvention | A seed crystal bonding method for aluminum nitride single crystal growth |
| abstract | A seed crystal bonding method for aluminum nitride single crystal growth, comprising (1) uniformly mixing aluminate powder with an inorganic polymer binder to form an inorganic glue; (2) uniformly applying the inorganic glue to on the substrate; (3) place the AlN seed crystal with a diameter of 5-300mm and a thickness of 0.1-5mm on the inorganic glue on the substrate; (4) place the bonded seed crystal under a pressure of 10-80N Place at room temperature for 5-20 hours; (5) then put the seed crystal and the substrate together in an oven at 50-300°C for 1-12 hours, then slowly cool down, and finally the seed crystal and the substrate are tightly bonded. The invention does not require a special complex process to firmly bond the large-size AlN seed crystal to the substrate, is not easy to generate voids, can withstand high temperatures above 2200 ° C, the seed crystal does not fall off, the process is simple, the cost is low, and the bonding seed crystal can be High-quality AlN single crystals are grown, which are suitable for mass production. |
| priorityDate | 2019-01-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 42.